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STGW75M65DF2

Name: STMicroelectronics STGW75M65DF2
Brand: STMicroelectronics
SKU: 511-STGW75M65DF2
Price: 626.17 INR
Availability: InStock

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Mouser No:

511-STGW75M65DF2

Mfr. No:

STGW75M65DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT M series, 650 V 75 A low loss

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Datasheet:

STGW75M65DF2 Datasheet (PDF)

ECAD Model:

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In Stock: 665

Stock:: 665 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹626.17	₹626.17
	₹372.72	₹3,727.20
	₹311.22	₹31,122.00
	₹303.77	₹1,82,262.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	120 A
Pd - Power Dissipation:	468 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGW75M65DF2
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	120 A
Gate-Emitter Leakage Current:	250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6 g

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Datasheet

STGW75M65DF2 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.