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STGW8M120DF3

Name: STMicroelectronics STGW8M120DF3
Brand: STMicroelectronics
SKU: 511-STGW8M120DF3
Price: 463.1 INR
Availability: InStock

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Mouser No:

511-STGW8M120DF3

Mfr. No:

STGW8M120DF3

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

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Datasheet:

STGW8M120DF3 Datasheet (PDF)

ECAD Model:

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In Stock: 343

Stock:: 343 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹463.10	₹463.10
	₹258.11	₹2,581.10
	₹212.45	₹21,245.00
	₹179.84	₹1,07,904.00
	₹177.04	₹2,12,448.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	16 A
Pd - Power Dissipation:	167 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	M
Packaging:	Tube
Brand:	STMicroelectronics
Gate-Emitter Leakage Current:	250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6 g

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Datasheet

STGW8M120DF3 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.