STGWA40H65DFB

STMicroelectronics
511-STGWA40H65DFB
STGWA40H65DFB

Mfr.:

Description:
IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 387

Stock:
387 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹374.58 ₹374.58
₹220.84 ₹2,208.40
₹175.18 ₹17,518.00
₹151.88 ₹91,128.00
₹131.38 ₹1,57,656.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
80 A
283 W
- 55 C
+ 175 C
STGWA40H65DFB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 80 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 6 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.