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STGWA40HP65FB2

Name: STMicroelectronics STGWA40HP65FB2
Brand: STMicroelectronics
SKU: 511-STGWA40HP65FB2
Price: 376.45 INR
Availability: InStock

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Mouser No:

511-STGWA40HP65FB2

Mfr. No:

STGWA40HP65FB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long

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Datasheet:

STGWA40HP65FB2 Datasheet (PDF)

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In Stock: 493

Stock:: 493 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹376.45	₹376.45
	₹241.34	₹2,413.40
	₹217.11	₹21,711.00
	₹164.00	₹98,400.00
	₹142.57	₹1,71,084.00
	₹139.77	₹4,19,310.00
	₹136.04	₹7,34,616.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	72 A
Pd - Power Dissipation:	227 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGWA40HP65FB2
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	72 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6.100 g

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Datasheet

STGWA40HP65FB2 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.