STGWA40M120DF3

STMicroelectronics
511-STGWA40M120DF3
STGWA40M120DF3

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
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In Stock: 158

Stock:
158
Can Dispatch Immediately
On Order:
600
Expected 16-11-2026
Factory Lead Time:
14
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹582.38 ₹582.38
₹330.79 ₹3,307.90
₹274.88 ₹27,488.00
₹244.13 ₹1,46,478.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.85 V
- 20 V, 20 V
80 A
468 W
- 55 C
+ 175 C
M
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 40 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 38 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

S Series Trench Gate Field-Stop IGBTs

STMicroelectronics S Series Trench Gate Field-Stop IGBTs are developed with an advanced proprietary trench gate field-stop structure. STMicroelectronics S Series 1200V IGBTs are tailored to maximize low-frequency industrial system efficiency. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

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