STGWA60H65DFB

STMicroelectronics
511-STGWA60H65DFB
STGWA60H65DFB

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
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In Stock: 591

Stock:
591 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹416.51 ₹416.51
₹231.09 ₹2,310.90
₹167.72 ₹16,772.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
2 V
- 20 V, 20 V
80 A
375 W
- 55 C
+ 175 C
STGWA60H65DFB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 80 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 38 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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