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STGWT80H65DFB

Name: STMicroelectronics STGWT80H65DFB
Brand: STMicroelectronics
SKU: 511-STGWT80H65DFB
Price: 686.74 INR
Availability: InStock

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Mouser No:

511-STGWT80H65DFB

Mfr. No:

STGWT80H65DFB

Mfr.:

STMicroelectronics

Datasheet:

ECAD Model:

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Stock:: 30

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On Order:: 300

Expected 22-06-2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-3P
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	120 A
Pd - Power Dissipation:	469 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGWT80H65DFB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	80 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	300
Subcategory:	IGBTs
Unit Weight:	6.756 g