STGWT80H65FB

STMicroelectronics
511-STGWT80H65FB
STGWT80H65FB

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Complete Your Design

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 252

Stock:
252 Can Dispatch Immediately
Quantities greater than 252 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹546.97 ₹546.97
₹330.79 ₹3,307.90

Similar Product

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IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Compare With Current Part

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-3P
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
120 A
469 W
- 55 C
+ 175 C
STGWT80H65FB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 80 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 300
Subcategory: IGBTs
Unit Weight: 6.756 g
Products found:
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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