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STL220N3LLH7

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See Product Specifications

Mouser No:

511-STL220N3LLH7

Mfr. No:

STL220N3LLH7

Mfr.:

STMicroelectronics

Description:

MOSFETs POWER MOSFET

Complete Your Design

Lifecycle:

Obsolete

Datasheet:

STL220N3LLH7 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5x6-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	220 A
Rds On - Drain-Source Resistance:	1.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	113 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	51 ns
Product Type:	MOSFETs
Rise Time:	115 ns
Series:	STL220N3LLH7
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	55 ns
Unit Weight:	76 mg

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STMicroelectronics STripFET™ H7 MOSFETs

STMicroelectronics STripFET H7 series are optimized for high-density, high-performance power management systems. The STripFET H7 have low conduction losses for a better efficiency, and switching performance improvement (lower VDS spike and no HF ringing). This series of trench-gate low-voltage MOSFETs combine an extremely low on-resistance and ultra low capacitances with an optimized built-in Schottky diode for higher switching frequency operation.
Learn More