STP16N65M2

STMicroelectronics
511-STP16N65M2
STP16N65M2

Mfr.:

Description:
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
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Datasheet:
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In Stock: 250

Stock:
250
Can Dispatch Immediately
On Order:
1,000
Expected 10-08-2026
Factory Lead Time:
18
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹283.27 ₹283.27
₹183.56 ₹1,835.60
₹125.79 ₹12,579.00
₹102.50 ₹51,250.00
₹93.18 ₹93,180.00
₹91.32 ₹1,82,640.00
₹87.03 ₹4,35,150.00
₹86.75 ₹8,67,500.00
25,000 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
11 A
360 mOhms
- 25 V, 25 V
3 V
19.5 nC
- 55 C
+ 150 C
110 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 11.3 ns
Product Type: MOSFETs
Rise Time: 8.2 ns
Series: STP16N65M2
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 36 ns
Typical Turn-On Delay Time: 11.3 ns
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

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