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STP33N60DM2

Name: STMicroelectronics STP33N60DM2
Brand: STMicroelectronics
SKU: 511-STP33N60DM2
Price: 317.14 INR
Availability: InStock

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Mouser No:

511-STP33N60DM2

Mfr. No:

STP33N60DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package

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Datasheet:

STP33N60DM2 Datasheet (PDF)

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In Stock: 1,426

Stock:: 1,426 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹317.14	₹317.14
	₹212.92	₹2,129.20
	₹197.65	₹19,765.00
	₹171.59	₹85,795.00
	₹159.02	₹1,59,020.00
	₹158.12	₹3,16,240.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	24 A
Rds On - Drain-Source Resistance:	130 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	9 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	STP33N60DM2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	62 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	2 g

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Datasheet

STP33N60DM2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.