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STWA60N043DM9

Name: STMicroelectronics STWA60N043DM9
Brand: STMicroelectronics
SKU: 511-STWA60N043DM9
Price: 1046.41 INR
Availability: InStock

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Mouser No:

511-STWA60N043DM9

Mfr. No:

STWA60N043DM9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET

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Datasheet:

STWA60N043DM9 Datasheet (PDF)

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In Stock: 78

Stock:: 78 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,046.41	₹1,046.41
	₹752.89	₹7,528.90
	₹667.17	₹80,060.40
	₹650.40	₹3,31,704.00
	₹635.49	₹6,48,199.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	43 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	78.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	MOSFETs
Series:	MDmesh DM9
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N Channel
Unit Weight:	6.100 g

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Datasheet

STWA60N043DM9 Datasheet (PDF)

PCN

Product Change Notification 2025-7-29 (PDF)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP60N043DM9 MDmesh DM9 Power MOSFET

STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low R_DS(on) per area coupled with a fast-recovery diode. The device implements innovative super-junction MDmesh DM9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.