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STWA75N65DM6

Name: STMicroelectronics STWA75N65DM6
Brand: STMicroelectronics
SKU: 511-STWA75N65DM6
Price: 1352.97 INR
Availability: InStock

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Mouser No:

511-STWA75N65DM6

Mfr. No:

STWA75N65DM6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long lea

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Datasheet:

STWA75N65DM6 Datasheet (PDF)

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In Stock: 393

Stock:: 393 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,352.97	₹1,352.97
	₹1,099.52	₹10,995.20
	₹914.10	₹91,410.00
	₹858.19	₹5,14,914.00
	₹790.17	₹9,48,204.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	75 A
Rds On - Drain-Source Resistance:	36 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	118 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	480 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	MOSFETs
Factory Pack Quantity:	600
Subcategory:	Transistors
Unit Weight:	6.100 g

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Datasheet

STWA75N65DM6 Datasheet (PDF)

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Compliance Codes

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Q_rr) and recovery time (t_rr), combined with low R_DS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.