CSD16408Q5C

595-CSD16408Q5C
CSD16408Q5C

Mfr.:

Description:
MOSFETs DualCool N-Channel NexFET Power MOSFET

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
ECAD Model:
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In Stock: 270

Stock:
270 Can Dispatch Immediately
Quantities greater than 270 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
₹232.02 ₹232.02
₹148.16 ₹1,481.60
₹101.57 ₹10,157.00
₹83.96 ₹41,980.00
₹77.81 ₹77,810.00
Full Reel (Order in multiples of 2500)
₹72.68 ₹1,81,700.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
VSON-CLIP-8
N-Channel
1 Channel
25 V
100 A
5.4 mOhms
- 16 V, 16 V
1.8 V
6.7 nC
- 55 C
+ 150 C
3.1 W
Enhancement
NexFET
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Configuration: Single
Fall Time: 10.8 ns
Forward Transconductance - Min: 60 S
Product Type: MOSFETs
Rise Time: 25 ns
Series: CSD16408Q5C
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 11 ns
Typical Turn-On Delay Time: 11.3 ns
Unit Weight: 105.800 mg
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Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8542399000
MXHTS:
85423999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFETPower MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.