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CSD19506KCS

Name: Texas Instruments CSD19506KCS
Brand: Texas Instruments
SKU: 595-CSD19506KCS
Price: 502.24 INR
Availability: InStock

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Mouser No:

595-CSD19506KCS

Mfr. No:

CSD19506KCS

Mfr.:

Texas Instruments

Datasheet:

ECAD Model:

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	2.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	120 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	10 ns
Forward Transconductance - Min:	297 S
Product Type:	MOSFETs
Rise Time:	11 ns
Series:	CSD19506KCS
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	19 ns
Unit Weight:	2 g