JFE150DCKT

Texas Instruments
595-JFE150DCKT
JFE150DCKT

Mfr.:

Description:
JFETs Ultra-low-noise low -gate-current audio JFE150DCKR

Datasheet:
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In Stock: 341

Stock:
341 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹270.22 ₹270.22
₹185.43 ₹1,854.30
₹157.47 ₹15,747.00
Full Reel (Order in multiples of 250)
₹157.47 ₹39,367.50
₹149.09 ₹74,545.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: JFETs
RoHS:  
Si
SMD/SMT
SC70-5
N-Channel
Single
40 V
- 40 V
- 1.2 V
50 mA
- 40 C
+ 125 C
JFE150
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Forward Transconductance - Min: 18 ms
Product Type: JFETs
Factory Pack Quantity: 250
Subcategory: Transistors
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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541210000
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

JFE150 Audio N-Channel JFET

Texas Instruments JFE150 Audio N-Channel JFET is a Burr-Brown™ discrete JFET built using Texas Instruments’ modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50µA to 20mA. When biased at 5mA, the device yields 0.8nV/√Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to protect without the addition of high leakage, nonlinear external diodes.

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