LM5113QDPRRQ1

Texas Instruments
595-LM5113QDPRRQ1
LM5113QDPRRQ1

Mfr.:

Description:
Gate Drivers Automotive 1.2-A/5-A 100-V half bridge

ECAD Model:
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In Stock: 1,104

Stock:
1,104
Can Dispatch Immediately
On Order:
4,500
Expected 05-06-2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 4500)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
₹423.04 ₹423.04
₹321.47 ₹3,214.70
₹296.31 ₹7,407.75
₹268.36 ₹26,836.00
₹254.38 ₹63,595.00
₹239.47 ₹2,39,470.00
₹229.22 ₹5,73,050.00
Full Reel (Order in multiples of 4500)
₹228.29 ₹10,27,305.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
WSON-10
2 Driver
2 Output
5 A
4.5 V
5.5 V
7 ns
3.5 ns
- 40 C
+ 125 C
LM5113
AEC-Q100
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Maximum Turn-Off Delay Time: 26.5 ns
Maximum Turn-On Delay Time: 28 ns
Operating Supply Current: 2 mA
Product Type: Gate Drivers
Factory Pack Quantity: 4500
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 49.200 mg
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Compliance Codes
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Malaysia
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

LM5113/LM5113-Q1 Half-Bridge Gate Driver

Texas Instruments LM5113/LM5113-Q1 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2V. This clamping prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113/LM5113-Q1 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113/LM5113-Q1 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently. The LM5113-Q1 devices are AEC-Q100 qualified for automotive applications.