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LM74701Q1EVM

Name: Texas Instruments LM74701Q1EVM
Brand: Texas Instruments
SKU: 595-LM74701Q1EVM
Price: 5479.92 INR
Availability: OutOfStock

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Mouser No:

595-LM74701Q1EVM

Mfr. No:

LM74701Q1EVM

Mfr.:

Texas Instruments

Description:

Power Management IC Development Tools LM74701-Q1 evaluatio n module for ideal

Datasheet:

LM74701Q1EVM Datasheet (PDF)

More Information

Learn more about Texas Instruments LM74701Q1EVM

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Qty.	Unit Price	Ext. Price
	₹5,479.92	₹5,479.92

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Power Management IC Development Tools
Delivery Restrictions:	This item may require additional fees and documentation. Customs delays may also occur.
RoHS:
REACH - SVHC:
Product:	Evaluation Modules
Type:	Ideal Diode
Input Voltage:	0 V to 12 V
Output Voltage:	0 V to 12 V
Tool Is For Evaluation Of:	LM74701-Q1
Series:	LM74701
Brand:	Texas Instruments
For Use With:	Deal Diode Controller with Integrated VDS Clamp
Product Type:	Power Management IC Development Tools
Factory Pack Quantity:	1
Subcategory:	Development Tools

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Datasheet

LM74701Q1EVM Datasheet (PDF)

Other

STANDARD TERMS FOR EVALUATION MODULES (PDF)

Compliance Codes

USHTS:: 8473301180
TARIC:: 8473302000
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

LM74701Q1EVM Controller Evaluation Module

Texas Instruments LM74701Q1EVM Controller Evaluation Module (EVM) helps designers evaluate the operation and performance of the LM74701-Q1 ideal diode controller with an integrated VDS clamp. This evaluation module demonstrates how an N-channel power MOSFET can emulate a very-low forward voltage diode with low I_Q and the low-leakage current flowing through the IC. In this design scheme, the Texas Instruments LM74701-Q1 is combined with a MOSFET and used in series with a battery to replace a Schottky diode and PFET in reverse-polarity protection circuitry.