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LMG1205YFXT

Name: Texas Instruments LMG1205YFXT
Brand: Texas Instruments
SKU: 595-LMG1205YFXT
Price: 395.08 INR
Availability: InStock

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See Product Specifications

Mouser No:

595-LMG1205YFXT

Mfr. No:

LMG1205YFXT

Mfr.:

Texas Instruments

Description:

Gate Drivers 1.2-A 5-A 90-V hal f bridge gate driver A 595-LMG1205YFXR

Datasheet:

LMG1205YFXT Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments LMG1205YFXT

In Stock: 61

Stock:: 61

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On Order:: 6,500

Expected 03-06-2026
Factory Lead Time:: 6

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹395.08	₹395.08
	₹300.04	₹3,000.40
	₹275.81	₹6,895.25
	₹248.79	₹24,879.00
Full Reel (Order in multiples of 250)
	₹231.09	₹57,772.50
	₹224.56	₹1,12,280.00
	₹215.25	₹2,15,250.00
	₹212.45	₹5,31,125.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	DSBGA-12
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	5 A
Supply Voltage - Min:	4.5 V
Supply Voltage - Max:	5.5 V
Rise Time:	7 ns
Fall Time:	3.5 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG1205
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Maximum Turn-Off Delay Time:	50 ns
Maximum Turn-On Delay Time:	50 ns
Operating Supply Current:	2 mA
Product Type:	Gate Drivers
Factory Pack Quantity:	250
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	GaN
Unit Weight:	3.400 mg

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SPICE Models

Technical Resources

LMG1205 TINA-TI Reference Design (Rev. A)

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Compliance Codes

CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: United States

The country is subject to change at the time of shipment.

Gallium Nitride (GaN)

Texas Instruments Gallium Nitride (GaN) solutions deliver high efficiency, power density, and reliability. The Texas Instruments GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.

LMG1205 Half-Bridge Gate Driver

Texas Instruments LMG1205 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5V. This feature prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LMG1205 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LMG1205 has split-gate outputs which provide flexibility to adjust the turn-on and turn-off strength independently.

LMG1025/LMG1025-Q1 Half-Bridge GaN Driver

The Texas Instruments LMG1025/LMG1025-Q1 Half-Bridge GaN Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs, for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique. It is internally clamped at 5V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement-mode GaN FETs. The inputs of the LMG1205/LMG1025-Q1 are TTL logic compatible and can withstand input voltages up to 14V, regardless of the VDD voltage. The LMG1205/LMG1205-Q1 has split-gate outputs, providing the required flexibility to independently adjust the turn-on and turn-off strength.