LMG2100R044RARR

Name: Texas Instruments LMG2100R044RARR
Brand: Texas Instruments
SKU: 595-LMG2100R044RARR
Price: 925.28 INR
Availability: InStock

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Mouser No:

595-LMG2100R044RARR

Mfr. No:

LMG2100R044RARR

Mfr.:

Texas Instruments

Description:

Gate Drivers 100-V 4.4-m? half-br idge GaN FET with i

Datasheet:

LMG2100R044RARR Datasheet

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In Stock: 504

Stock:: 504

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On Order:: 5,000

Expected 16-07-2026

10,000

Expected 03-08-2026
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1 Maximum: 170

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹925.28	₹925.28
	₹633.62	₹6,336.20
	₹478.01	₹47,801.00
Full Reel (Order in multiples of 2500)
	₹478.01	₹11,95,025.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	VQFN-FCRLF-16
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG2100R044
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs

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Datasheet

LMG2100R044RARR Datasheet

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Compliance Codes

CNHTS:: 8542399000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: United States

The country is subject to change at the time of shipment.

LMG2100R044 GaN Half-Bridge Power Stage

Texas Instruments LMG2100R044 GaN Half-Bridge Power Stage is a 90V continuous, 100V pulsed, 35A half-bridge power stage with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The LMG2100R044 combines two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration. The GaN FETs offer significant advantages for power conversion, such as zero reverse recovery and minimal input capacitance CISS and output capacitance COSS.