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UCC21530BQDWKQ1

Name: Texas Instruments UCC21530BQDWKQ1
Brand: Texas Instruments
SKU: 595-UCC21530BQDWKQ1
Price: 872.16 INR
Availability: InStock

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See Product Specifications

Mouser No:

595-UCC21530BQDWKQ1

Mfr. No:

UCC21530BQDWKQ1

Mfr.:

Texas Instruments

Description:

Galvanically Isolated Gate Drivers Automotive 4-A 6-A 5.7-kVRMS isolated UCC21530BQDWKRQ1

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

UCC21530BQDWKQ1 Datasheet

ECAD Model:

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In Stock: 444

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹872.16	₹872.16
	₹675.56	₹6,755.60
	₹626.17	₹15,654.25
	₹572.13	₹68,655.60
	₹546.03	₹1,52,888.40
	₹530.19	₹2,75,698.80
	₹516.22	₹5,16,220.00
2,520	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	UCC21530
Mounting Style:	SMD/SMT
Package/Case:	SOIC-14
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	1.81 W
Propagation Delay - Max:	30 ns
Rise Time:	6 ns
Fall Time:	7 ns
Packaging:	Tube
Brand:	Texas Instruments
Moisture Sensitive:	Yes
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Operating Supply Current:	2 mA, 3 mA
Output Current:	6 A
Product:	Isolated Gate Drivers
Product Type:	Galvanically Isolated Gate Drivers
Factory Pack Quantity:	40
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	18 V
Supply Voltage - Min:	3 V
Technology:	Si
Type:	Half-Bridge

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Attributes selected: 0

Filter Document:

Datasheet

UCC21530BQDWKQ1 Datasheet

EOL

Product Discontinuance Notification 2024-03-01 (PDF)

PCN

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Compliance Codes

CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

UCC21530/UCC21530-Q1 Isolated Gate Drivers

Texas Instruments UCC21530/UCC21530-Q1 Isolated Dual-Channel Gate Drivers feature a 4A source and 6A sink peak current and are designed to drive IGBTs and SiC MOSFETs up to 5MHz with best-in-class propagation delay and pulse-width distortion. The driver's input side is isolated from the two output drivers by a 5.7kV_RMS reinforced isolation barrier, with a minimum of 100V/ns common-mode transient immunity (CMTI). The internal functional isolation between the two secondary-side drivers also allows a working voltage of up to 1850V.