UCC27210DRMR

Texas Instruments
595-UCC27210DRMR
UCC27210DRMR

Mfr.:

Description:
Gate Drivers 120V Boot 4A Peak Hi Freq Hi/Lo-Side Drv A 595-UCC27210DRMT

Datasheet:
ECAD Model:
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More Information
Learn more about Texas Instruments UCC27210DRMR

Availability

Stock:
Non-Stocked
Factory Lead Time:
6 Weeks Estimated factory production time.
Minimum: 3000   Multiples: 3000
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 3000)
₹150.02 ₹4,50,060.00
₹149.09 ₹8,94,540.00

Alternative Packaging

Mfr. Part No.:
UCC27210DRMT
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
₹397.88
Min:
1

Similar Product

Texas Instruments UCC27210DRMT
Texas Instruments
Gate Drivers 120V Boot 4A Peak Hi Freq Hi/Lo-Side Drv A 595-UCC27210DRMR
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
VSON-8
4 A
7.8 V
20 V
8 ns
7 ns
- 40 C
+ 140 C
UCC27210
Reel
Brand: Texas Instruments
Product Type: Gate Drivers
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 24 mg
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Attributes selected: 0

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Compliance Codes
CNHTS:
8542319000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.

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