UCC27211AQDRQ1

Texas Instruments
595-UCC27211AQDRQ1
UCC27211AQDRQ1

Mfr.:

Description:
Gate Drivers Automotive 4-A 120- V half bridge gate d

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 2,837

Stock:
2,837 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1   Maximum: 25
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
₹250.65 ₹250.65
₹185.43 ₹1,854.30
₹169.59 ₹4,239.75
Full Reel (Order in multiples of 3000)
₹169.59 ₹5,08,770.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Gate Drivers
Half-Bridge
SMD/SMT
SOIC-8
2 Driver
2 Output
3.7 A, 4.5 A
8 V
17 V
Non-Inverting
7.2 ns
5.5 ns
- 50 C
+ 150 C
UCC27211A
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Logic Type: CMOS, TTL
Maximum Turn-Off Delay Time: 17 ns
Maximum Turn-On Delay Time: 17 ns
Moisture Sensitive: Yes
Operating Supply Current: 3 mA
Product Type: Gate Drivers
Propagation Delay - Max: 42 ns
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
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Compliance Codes
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Mexico
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.