TK39A60W,S4VX

Toshiba
757-TK39A60WS4VX
TK39A60W,S4VX

Mfr.:

Description:
MOSFETs N-Ch DTMOSIV 600 V 50W 4100pF 38.8A

ECAD Model:
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In Stock: 85

Stock:
85 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹910.98 ₹910.98
₹507.60 ₹5,076.00
₹468.07 ₹46,807.00
₹437.52 ₹2,18,760.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220FP-3
N-Channel
1 Channel
600 V
38.8 A
55 mOhms
- 30 V, 30 V
3.7 V
110 nC
- 55 C
+ 150 C
50 W
Enhancement
DTMOSIV
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 9 ns
Product Type: MOSFETs
Rise Time: 50 ns
Series: TK39A60W
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 200 ns
Typical Turn-On Delay Time: 80 ns
Unit Weight: 2 g
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.