TK7A80W,S4X

Toshiba
757-TK7A80WS4X
TK7A80W,S4X

Mfr.:

Description:
MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ

ECAD Model:
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In Stock: 551

Stock:
551 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹309.05 ₹309.05
₹143.74 ₹1,437.40
₹142.85 ₹14,285.00
₹135.66 ₹67,830.00
₹130.27 ₹1,30,270.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
6.5 A
950 mOhms
- 20 V, 20 V
3 V
13 nC
- 55 C
+ 150 C
35 W
Enhancement
DTMOSIV
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 8 ns
Product Type: MOSFETs
Rise Time: 18 ns
Series: TK7A80W
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 70 ns
Typical Turn-On Delay Time: 45 ns
Unit Weight: 2 g
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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.