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TK9J90E,S1E

Name: Toshiba TK9J90E,S1E
Brand: Toshiba
SKU: 757-TK9J90ES1E
Price: 370.86 INR
Availability: InStock

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Mouser No:

757-TK9J90ES1E

Mfr. No:

TK9J90E,S1E

Mfr.:

Toshiba

Description:

MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-3PN

Datasheet:

TK9J90E,S1E Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK9J90E,S1E

In Stock: 2,984

Stock:: 2,984 Can Dispatch Immediately

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Factory Lead Time:: 9 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹370.86	₹370.86
	₹210.59	₹2,105.90
	₹171.45	₹17,145.00
	₹149.09	₹74,545.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3P
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	900 V
Id - Continuous Drain Current:	9 A
Rds On - Drain-Source Resistance:	1.3 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	MOSVIII
Packaging:	Tray
Brand:	Toshiba
Configuration:	Single
Fall Time:	35 ns
Product Type:	MOSFETs
Rise Time:	40 ns
Series:	TK9J90E
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	140 ns
Typical Turn-On Delay Time:	80 ns
Unit Weight:	1.600 g

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Datasheet

TK9J90E,S1E Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low R_DS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.