CAB006A12GM3

Wolfspeed
941-CAB006A12GM3
CAB006A12GM3

Mfr.:

Description:
Discrete Semiconductor Modules SiC, Module, 6mohm, 1200V, 48 mm, AlN GM3, Half-Bridge, Industrial

Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
54
Expected 15-06-2026
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹22,092.05 ₹22,092.05
₹20,092.40 ₹2,00,924.00

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: Discrete Semiconductor Modules
RoHS: N
SiC Modules
Half Bridge
SiC
4.9 V
1.2 kV
- 4 V, + 15 V
Screw Mount
- 40 C
+ 150 C
WolfPACK
Tray
Brand: Wolfspeed
Configuration: H-Bridge
Id - Continuous Drain Current: 200 A
Pd - Power Dissipation: 10 mW
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 6 mOhms
Factory Pack Quantity: 18
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.6 V
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8504409100
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

WolfPACK™ SiC-Based Power Modules

Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than is achievable with either multiple discrete devices or with larger, high-ampacity modules.

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