4N38VM

onsemi
512-4N38VM
4N38VM

Mfr.:

Description:
Transistor Output Optocouplers 6PW HVCEO TR DIP VDE

ECAD Model:
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This item may require additional fees and documentation. Customs delays may also occur.

In Stock: 1,940

Stock:
1,940 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹65.23 ₹65.23
₹45.29 ₹452.90
₹33.08 ₹3,308.00
₹27.67 ₹13,835.00
₹25.72 ₹25,720.00
₹24.23 ₹48,460.00
₹20.41 ₹1,02,050.00
₹19.57 ₹1,95,700.00
₹19.01 ₹4,75,250.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Transistor Output Optocouplers
Delivery Restrictions:
 This item may require additional fees and documentation. Customs delays may also occur.
RoHS:  
Through Hole
DIP-6
1 Channel
4170 Vrms
NPN Phototransistor
20 %
80 mA
1.5 V
80 V
100 mA
1 V
6 V
420 mW
- 40 C
+ 100 C
4N38M
Bulk
Brand: onsemi
Configuration: 1 Channel
Current Transfer Ratio: 20 %
Product Type: Transistor Output Optocouplers
Factory Pack Quantity: 1000
Subcategory: Optocouplers
Unit Weight: 400 mg
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Attributes selected: 0

Compliance Codes
CNHTS:
8541490000
CAHTS:
8541490020
USHTS:
8541498000
KRHTS:
8541409029
TARIC:
8541490000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Thailand
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

4N38xM 6-Pin DIP Phototransistor Optocouplers

onsemi / Fairchild 4N38xM 6-Pin DIP High Voltage Phototransistor Optocouplers are designed as phototransistor-type optically coupled optoisolators. The 4N38xM series features a gallium arsenide infrared emitting diode coupled with a high voltage NPN silicon phototransistor. The devices have a UL 1577 safety and regulatory approval of 4,170VAC RMS for 1 minute and are DIN-EN/IEC60747-5-5 certified at 850V peak working insulation voltage.