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FDMS3600S

Images are for reference only
See Product Specifications

Mouser No:

512-FDMS3600S

Mfr. No:

FDMS3600S

Mfr.:

onsemi

Description:

MOSFETs 25V Dual N-Channel PowerTrench MOSFET

Lifecycle:

Obsolete

Datasheet:

FDMS3600S Datasheet (PDF)

ECAD Model:

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Shipping Alert:

Mouser does not presently sell this product in your region.

Availability

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	Power-56-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	15 A, 30 A
Rds On - Drain-Source Resistance:	5.6 mOhms, 1.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V, 3 V
Qg - Gate Charge:	19 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Tradename:	Power Stage PowerTrench SyncFet
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Dual
Fall Time:	1.8 ns, 3.9 ns
Forward Transconductance - Min:	67 S, 171 S
Product Type:	MOSFETs
Rise Time:	2 ns, 5.3 ns
Series:	FDMS3600S
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	19 ns, 38 ns
Typical Turn-On Delay Time:	7.9 ns, 13 ns
Unit Weight:	171 mg

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Filter Document:

Datasheet

FDMS3600S Datasheet (PDF)

EOL

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Mexico
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and R_DS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low R_DS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low R_DS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering