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FGH75T65SQD-F155

Name: onsemi FGH75T65SQD-F155
Brand: onsemi
SKU: 512-FGH75T65SQD_F155
Price: 634.27 INR
Availability: OutOfStock

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Mouser No:

512-FGH75T65SQD_F155

Mfr. No:

FGH75T65SQD-F155

Mfr.:

onsemi

Description:

IGBTs 650V FS4 Trench IGBT

Datasheet:

FGH75T65SQD-F155 Datasheet

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Availability

Stock:: 0

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On Order:: 900

Expected 17-02-2026
Factory Lead Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹634.27	₹634.27
	₹364.75	₹3,647.50
	₹305.46	₹30,546.00
	₹298.27	₹1,34,221.50

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	150 A
Pd - Power Dissipation:	375 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGH75T65SQD
Packaging:	Tube
Brand:	onsemi
Gate-Emitter Leakage Current:	+/- 400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Part # Aliases:	FGH75T65SQD_F155
Unit Weight:	6.390 g

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Datasheet

FGH75T65SQD-F155 Datasheet

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Field Stop IGBTs

onsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.