FOD8383V

onsemi
512-FOD8383V
FOD8383V

Mfr.:

Description:
MOSFET Output Optocouplers FOD8383 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP 5-Pin

ECAD Model:
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This item may require additional fees and documentation. Customs delays may also occur.

Availability

Stock:
2,000 Can Dispatch in 20 Days
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹552.56 ₹552.56
₹414.65 ₹4,146.50
₹332.65 ₹33,265.00
₹297.24 ₹1,48,620.00
₹275.81 ₹2,75,810.00
₹265.56 ₹6,63,900.00
5,000 Quote

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
₹552.56
Min:
1

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFET Output Optocouplers
Delivery Restrictions:
 This item may require additional fees and documentation. Customs delays may also occur.
RoHS:  
SMD/SMT
SOP-5
Push-Pull
1 Channel
5000 Vrms
25 mA
1.43 V
5 V
500 mW
- 40 C
+ 100 C
FOD8383
Tube
Brand: onsemi
Fall Time: 25 ns
Product Type: MOSFET Output Optocouplers
Rise Time: 35 ns
Factory Pack Quantity: 100
Subcategory: Optocouplers
Unit Weight: 400 mg
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Attributes selected: 0

Compliance Codes
CNHTS:
8541490000
CAHTS:
8541490020
USHTS:
8541498000
KRHTS:
8541409029
TARIC:
8541409000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Philippines
Country of Diffusion:
Japan
The country is subject to change at the time of shipment.

FOD8383/4 High-Speed MOSFET/IGBT Optocouplers

onsemi FOD8383/4 High-Speed MOSFET/IGBT Gate Drive Optocouplers are 2.5A output current gate drive optocouplers that are capable of driving medium-power IGBT/MOSFETs. They are ideally suited for fast-switching driving of power IGBT and MOSFET used in motor-control inverter applications and high-performance power systems. The onsemi FOD8383/4 utilizes Optoplanar® coplanar packaging technology and optimized IC design to achieve reliable high-insulation voltage and high-noise immunity. Each device consists of an Aluminum Gallium Arsenide (AlGaAs) Light-Emitting Diode (LED) optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage.