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NTBG015N065SC1

Name: onsemi NTBG015N065SC1
Brand: onsemi
SKU: 863-NTBG015N065SC1
Price: 2153.46 INR
Availability: InStock

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Mouser No:

863-NTBG015N065SC1

Mfr. No:

NTBG015N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L

Datasheet:

NTBG015N065SC1 Datasheet

ECAD Model:

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Learn more about onsemi NTBG015N065SC1

In Stock: 3,923

Stock:: 3,923 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹2,153.46	₹2,153.46
	₹1,882.15	₹18,821.50
	₹1,853.40	₹1,85,340.00
	₹1,579.39	₹7,89,695.00
Full Reel (Order in multiples of 800)
	₹1,565.01	₹12,52,008.00
4,800	Quote

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	145 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	283 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	9.6 ns
Forward Transconductance - Min:	42 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	26 ns
Series:	NTBG015N065SC1
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	49 ns
Typical Turn-On Delay Time:	23 ns

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Datasheet

NTBG015N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

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