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NVH4L080N120SC1

Name: onsemi NVH4L080N120SC1
Brand: onsemi
SKU: 863-NVH4L080N120SC1
Price: 1186.18 INR
Availability: InStock

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Mouser No:

863-NVH4L080N120SC1

Mfr. No:

NVH4L080N120SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 80MOHM 1200V

Datasheet:

NVH4L080N120SC1 Datasheet

ECAD Model:

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More Information

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In Stock: 679

Stock:: 679 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,186.18	₹1,186.18
	₹712.83	₹7,128.30
	₹711.90	₹85,428.00
	₹658.78	₹3,35,977.80
	₹615.92	₹6,28,238.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	170 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	5.4 ns
Forward Transconductance - Min:	11.3 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	4.2 ns
Series:	NVH4L080N120SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	26.8 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	6 g

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Datasheet

NVH4L080N120SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

Compliance Codes

CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.