FFSD0865B-F085

onsemi
863-FFSD0865B-F085
FFSD0865B-F085

Mfr.:

Description:
SiC Schottky Diodes 650V 8A SIC SBD GEN1.5

Datasheet:
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Learn more about onsemi FFSD0865B-F085

In Stock: 3,962

Stock:
3,962 Can Dispatch Immediately
Factory Lead Time:
9 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹335.10 ₹335.10
₹218.31 ₹2,183.10
₹153.63 ₹15,363.00
₹135.66 ₹67,830.00
₹123.98 ₹1,23,980.00
Full Reel (Order in multiples of 2500)
₹115.00 ₹2,87,500.00
₹110.50 ₹5,52,500.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
SMD/SMT
DPAK-3 (TO-252-3)
Single
8 A
650 V
1.39 V
42 A
40 uA
- 55 C
+ 175 C
FFSD0865B-F085
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: onsemi
Pd - Power Dissipation: 91 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 2500
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 650 V
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Attributes selected: 0

Datasheet

PCN

CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

FFSx0865B-F085 650V SiC Schottky Diodes

onsemi FFSx0865B-F085 650V 8A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSx0865B-F085 SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, reduced system size, and increased cost-effectiveness. The FFSx0865B-F085 650V, 8A SiC Schottky Diodes are available in a D2PAK-3 package.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

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