It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GCMX040A120B3H1P

Name: SemiQ GCMX040A120B3H1P
Brand: SemiQ
SKU: 148-GCMX040A120B3H1P
Price: 5182.87 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

148-GCMX040A120B3H1P

Mfr. No:

GCMX040A120B3H1P

Mfr.:

SemiQ

Description:

MOSFET Modules SiC 1200V 40mohm MOSFET Full-Bridge Module

Datasheet:

GCMX040A120B3H1P Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about SemiQ GCMX040A120B3H1P

In Stock: 31

Stock:: 31 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 2 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹5,182.87	₹5,182.87
	₹4,122.76	₹41,227.60
	₹3,813.71	₹3,81,371.00
Full Reel (Order in multiples of 40)
	₹4,122.76	₹1,64,910.40
500	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
REACH - SVHC:
Technology:	SiC
Mounting Style:	Press Fit
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	53 A
Rds On - Drain-Source Resistance:	38 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	208 W
Series:	GCMX
Packaging:	Reel
Packaging:	Cut Tape
Brand:	SemiQ
Fall Time:	12 ns
Product Type:	MOSFET Modules
Rise Time:	6 ns
Factory Pack Quantity:	40
Subcategory:	Discrete and Power Modules
Type:	Full Bridge
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	16 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GCMX040A120B3H1P Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.