GP3T080A120H

SemiQ
148-GP3T080A120H
GP3T080A120H

Mfr.:

Description:
SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
1 Channel
1.2 kV
70 A
100 mOhms
- 4.5 V, + 18 V
4 V
53 nC
- 55 C
+ 175 C
147 W
Enhancement
Brand: SemiQ
Configuration: Single
Fall Time: 9 ns
Forward Transconductance - Min: 6 S
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 4 ns
Series: GP3T
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 13 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.

In Stock: 165

Stock:
165 Can Dispatch Immediately
Factory Lead Time:
7 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹668.78 ₹668.78
₹373.56 ₹3,735.60
₹348.72 ₹41,846.40
₹286.62 ₹1,46,176.20
₹276.11 ₹2,81,632.20