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IPB95R450PFD7ATMA1

Name: Infineon IPB95R450PFD7ATMA1
Brand: Infineon Technologies
SKU: 726-IPB95R450PFD7ATM
Price: 278.5 INR
Availability: OutOfStock

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Mouser No:

726-IPB95R450PFD7ATM

Mfr. No:

IPB95R450PFD7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs LOW POWER_NEW

Datasheet:

IPB95R450PFD7ATMA1 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: 0

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On Order:: 1,000

Expected 09-04-2026
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹278.50	₹278.50
	₹181.48	₹1,814.80
	₹125.78	₹12,578.00
	₹106.01	₹53,005.00
Full Reel (Order in multiples of 1000)
	₹98.82	₹98,820.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	950 V
Id - Continuous Drain Current:	13.3 A
Rds On - Drain-Source Resistance:	450 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4.7 ns
Product Type:	MOSFETs
Rise Time:	8.7 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	IPB95R450PFD7 SP005547014

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Datasheet

IPB95R450PFD7ATMA1 Datasheet (PDF)

ROHS Declaration of Compliance (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).