It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IPD220N06L3GATMA1

Name: Infineon IPD220N06L3GATMA1
Brand: Infineon Technologies
SKU: 726-IPD220N06L3GATM1
Price: 106.01 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IPD220N06L3GATM1

Mfr. No:

IPD220N06L3GATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Datasheet:

IPD220N06L3GATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IPD220N06L3GATMA1

In Stock: 3,992

Stock:: 3,992 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹106.01	₹106.01
	₹66.84	₹668.40
	₹44.29	₹4,429.00
	₹34.95	₹17,475.00
	₹31.71	₹31,710.00
Full Reel (Order in multiples of 2500)
	₹27.31	₹68,275.00
	₹24.17	₹1,20,850.00
	₹23.54	₹2,35,400.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	22 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	36 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Fall Time:	3 ns
Forward Transconductance - Min:	16 S
Product Type:	MOSFETs
Rise Time:	3 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	IPD220N06L3 G SP005559927

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IPD220N06L3GATMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.