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IPD95R450PFD7ATMA1

Name: Infineon IPD95R450PFD7ATMA1
Brand: Infineon Technologies
SKU: 726-IPD95R450PFD7ATM
Price: 247.96 INR
Availability: InStock

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Mouser No:

726-IPD95R450PFD7ATM

Mfr. No:

IPD95R450PFD7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs LOW POWER_NEW

Datasheet:

IPD95R450PFD7ATMA1 Datasheet (PDF)

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In Stock: 958

Stock:: 958 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹247.96	₹247.96
	₹160.81	₹1,608.10
	₹110.50	₹11,050.00
	₹90.74	₹45,370.00
	₹84.09	₹84,090.00
Full Reel (Order in multiples of 2500)
	₹84.09	₹2,10,225.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	950 V
Id - Continuous Drain Current:	13.3 A
Rds On - Drain-Source Resistance:	450 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4.7 ns
Product Type:	MOSFETs
Rise Time:	8.7 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	9 ns
Part # Aliases:	IPD95R450PFD7 SP005547015

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Datasheet

IPD95R450PFD7ATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

950V CoolMOS™ PFD7 SJ MOSFETs

Infineon Technologies 950V CoolMOS™ PFD7 SJ MOSFETs offer super junction (SJ) technologies. The SJ technology is ideal for lighting and industrial SMPS applications by incorporating best-in-class performance with state-of-the-art ease of use. The PFDJ provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge (Qrr).