IPI086N10N3 G

Infineon Technologies
726-IPI086N10N3G
IPI086N10N3 G

Mfr.:

Description:
MOSFETs N-Ch 100V 80A I2PAK-3 OptiMOS 3

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-262-3
N-Channel
1 Channel
100 V
80 A
8.2 mOhms
20 V
2.7 V
55 nC
- 55 C
+ 175 C
125 W
Enhancement
OptiMOS
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 8 ns
Product Type: MOSFETs
Rise Time: 42 ns
Series: OptiMOS 3
Factory Pack Quantity: 500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 18 ns
Part # Aliases: SP000683070 IPI86N1N3GXK IPI086N10N3GXKSA1
Unit Weight: 2.387 g
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Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
China
Country of Diffusion:
Malaysia
The country is subject to change at the time of shipment.

In Stock: 2,491

Stock:
2,491 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹303.82 ₹303.82
₹150.95 ₹1,509.50
₹135.67 ₹13,567.00
₹112.74 ₹56,370.00
₹94.87 ₹2,37,175.00