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IS29GL128-70DLET

Name: ISSI IS29GL128-70DLET
Brand: ISSI
SKU: 870-IS29GL128-70DLET
Price: 670.21 INR
Availability: InStock

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Mouser No:

870-IS29GL128-70DLET

Mfr. No:

IS29GL128-70DLET

Mfr.:

ISSI

Description:

NOR Flash 128Mb, 64 Ball BGA(9X9mm), 3V, RoHS, Highest Sector Protected

Datasheet:

IS29GL128-70DLET Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ISSI IS29GL128-70DLET

In Stock: 390

Stock:: 390 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹670.21	₹670.21
	₹624.39	₹6,243.90
	₹605.52	₹15,138.00
	₹591.15	₹29,557.50
	₹576.77	₹57,677.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	BGA-64
Series:	IS29GL128
Memory Size:	128 Mbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	45 mA
Interface Type:	Parallel
Organisation:	16 M x 8/8 M x 16
Data Bus Width:	8 bit/16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Brand:	ISSI
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	70 ns
Factory Pack Quantity:	260
Subcategory:	Memory & Data Storage

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Datasheet

IS29GL128-70DLET Datasheet (PDF)

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CNHTS:: 8542329090
CAHTS:: 8542320040
USHTS:: 8542320051
TARIC:: 8542326100
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

SPI NOR Flash ICs

ISSI SPI NOR Flash ICs are low voltage Serial Peripheral Interface NOR Flash Memory Devices offering features such as Double Data Rate (DTR/DDR) interface modes, SFDP support, and 2-cycle instruction input (QPI mode).

IS29GL128 NOR Flash Memory Devices

ISSI IS29GL128 NOR Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The IS29GL128 memory devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption.