IS66WVH8M8FBLL-166B1LI

Name: ISSI IS66WVH8M8FBLL-166B1LI
Brand: ISSI
SKU: 870-VH8M8FBLL166B1LI
Price: 519.74 INR
Availability: InStock

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Mouser No:

870-VH8M8FBLL166B1LI

Mfr. No:

IS66WVH8M8FBLL-166B1LI

Mfr.:

ISSI

Description:

DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS

Datasheet:

IS66WVH8M8FBLL-166B1LI Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	HyperRAM
Memory Size:	64 Mbit
Data Bus Width:	8 bit
Maximum Clock Frequency:	166 MHz
Package/Case:	TFBGA-24
Organisation:	8 M x 8
Access Time:	36 ns
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Brand:	ISSI
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	480
Subcategory:	Memory & Data Storage
Supply Current - Max:	20 mA

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Datasheet

IS66WVH8M8FBLL-166B1LI Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542329010
CAHTS:: 8542320020
USHTS:: 8542320002
MXHTS:: 8542320299
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

FEATURED PRODUCTS

ISSI

LPDDR4 & LPDDR4X Mobile SDRAM

Low-voltage memory devices, available in 2Gb, 4Gb, and 8Gb densities, ideal for mobile applications.

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DDR4 DRAM

High-speed DRAM devices internally organized with an eight-bank setup.

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DDR3 SDRAM

Deliver high-speed data transfer rates up to 2133Mbps.

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Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

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Mobile LPDDR2 SDRAM

High-speed operation, using a double data rate architecture, a prefetch architecture.

Learn More

In Stock: 752

Stock:: 752 Can Dispatch Immediately

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Factory Lead Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹519.74	₹519.74
	₹485.34	₹4,853.40
	₹471.01	₹11,775.25
	₹459.55	₹22,977.50
	₹449.04	₹44,904.00

IS66WVH8M8FBLL-166B1LI

Mfr.: ISSI

Description: DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS

Specifications

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Datasheet

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Product & Trade Compliance

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Pseudo SRAM/CellularRAM

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Mfr.:

ISSI

Description:

DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS

FEATURED PRODUCTS

ISSI