It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

IS66WVQ16M4FBLL-200BLI

Name: ISSI IS66WVQ16M4FBLL-200BLI
Brand: ISSI
SKU: 870-VQ16M4DBLL200BLI
Price: 726.1 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

870-VQ16M4DBLL200BLI

Mfr. No:

IS66WVQ16M4FBLL-200BLI

Mfr.:

ISSI

Description:

DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ISSI IS66WVQ16M4FBLL-200BLI

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	SDRAM
Memory Size:	64 Mbit
Maximum Clock Frequency:	200 MHz
Package/Case:	TFBGA-24
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Brand:	ISSI
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	480
Subcategory:	Memory & Data Storage

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes

CAHTS:: 8542320020
USHTS:: 8542320002
MXHTS:: 8542320299
ECCN:: 3A991.b.2.a

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

FEATURED PRODUCTS

ISSI

LPDDR4 & LPDDR4X Mobile SDRAM

Low-voltage memory devices, available in 2Gb, 4Gb, and 8Gb densities, ideal for mobile applications.

Learn More

DDR4 DRAM

High-speed DRAM devices internally organized with an eight-bank setup.

Learn More

DDR3 SDRAM

Deliver high-speed data transfer rates up to 2133Mbps.

Learn More

Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

Learn More

Mobile LPDDR2 SDRAM

High-speed operation, using a double data rate architecture, a prefetch architecture.

Learn More

In Stock: 369

Stock:: 369 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹726.10	₹726.10
	₹675.47	₹6,754.70
	₹655.40	₹16,385.00
	₹624.83	₹31,241.50
	₹609.55	₹60,955.00

IS66WVQ16M4FBLL-200BLI

Share This

Mfr.: ISSI

Description: DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS

Specifications

Environmental Documents

Product & Trade Compliance

More Information

Pseudo SRAM/CellularRAM

Customers Also Purchased

FEATURED PRODUCTS ISSI

In Stock: 369

Pricing (INR)

QuickView

An unexpected error has occurred.

Mfr.:

ISSI

Description:

DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS

FEATURED PRODUCTS

ISSI