ISC151N20NM6ATMA1

Infineon Technologies
726-ISC151N20NM6ATMA
ISC151N20NM6ATMA1

Mfr.:

Description:
MOSFETs IFX FET >150 - 400V

Datasheet:
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Learn more about Infineon Technologies ISC151N20NM6ATMA1

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
9,395
Expected 12-11-2026
Factory Lead Time:
52
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 5000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹486.03 ₹486.03
₹343.19 ₹3,431.90
₹247.06 ₹24,706.00
₹240.77 ₹1,20,385.00
Full Reel (Order in multiples of 5000)
₹196.75 ₹9,83,750.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
TDSON-8
N-Channel
1 Channel
200 V
74 A
15.1 mOhms
- 20 V, 20 V
3.7 V
31 nC
- 55 C
+ 175 C
200 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 7 ns
Forward Transconductance - Min: 15 S
Product Type: MOSFETs
Rise Time: 10 ns
Factory Pack Quantity: 5000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 15 ns
Typical Turn-On Delay Time: 10 ns
Part # Aliases: ISC151N20NM6 SP005562947
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Attributes selected: 0

Datasheet

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced RDS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 6 200V Power MOSFETs

Infineon Technologies OptiMOS™ 6 200V Power MOSFETs are N-channel normal level MOSFETs available in PG-TO263-3, PG-TO220-3, and PG-HDSOP-16 packages. These MOSFETs feature excellent gate charge x RDS(on) product (FOM), very low reverse recovery charge (Qrr), and low on‑resistance RDS(on). The OptiMOS™ 6 200V MOSFETs operate at 175°C temperature. These MOSFETs are halogen‑free according to IEC61249‑2‑21 and Moisture Sensitivity Level (MSL 1) classified according to J‑STD-020 standards. The OptiMOS™ 6 200V MOSFETs are ideal for renewables, motor control, audio amplifiers, and industrial applications.

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.

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