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IXXH50N60C3

Name: IXYS IXXH50N60C3
Brand: IXYS
SKU: 747-IXXH50N60C3
Price: 532.16 INR
Availability: OutOfStock

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Mouser No:

747-IXXH50N60C3

Mfr. No:

IXXH50N60C3

Mfr.:

IXYS

Description:

IGBTs XPT IGBT C3-Class 600V/100 Amp

Datasheet:

IXXH50N60C3 Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247AD
Mounting Style:	Through Hole
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2.3 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	100 A
Pd - Power Dissipation:	600 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXXH50N60
Packaging:	Tube
Brand:	IXYS
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors
Tradename:	XPT
Unit Weight:	6.500 g

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Datasheet

IXXH50N60C3 Datasheet

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Mexico
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Discrete 600V XPT IGBTs

IXYS Discrete 600V XPT Insulated-Gate Bipolar Transistors (IGBTs) are highly rugged, low loss semiconductor devices that are easily configured in parallel. Developed using IXYS' extreme light punch through (XPT) design platform, these new devices feature excellent electrical characteristics which include low typical Vcesat, low typical current fall times, and low typical turn-off energy per pulse values.

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