LF2106NTR

IXYS Integrated Circuits
747-LF2106NTR
LF2106NTR

Mfr.:

Description:
Gate Drivers HI LO Side DRVR 130mA SOIC(N)-8

Datasheet:
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In Stock: 10,355

Stock:
10,355 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹111.40 ₹111.40
₹81.04 ₹810.40
₹73.40 ₹1,835.00
₹64.95 ₹6,495.00
₹60.91 ₹15,227.50
₹58.49 ₹29,245.00
₹54.35 ₹54,350.00
Full Reel (Order in multiples of 2500)
₹52.38 ₹1,30,950.00
₹51.66 ₹3,87,450.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: Gate Drivers
RoHS:  
Driver ICs - Various
High-Side, Low-Side
SMD/SMT
SOIC-8
2 Driver
2 Output
10 V
20 V
100 ns
35 ns
- 40 C
+ 125 C
Reel
Cut Tape
MouseReel
Brand: IXYS Integrated Circuits
Logic Type: CMOS, TTL
Maximum Turn-Off Delay Time: 280 ns
Maximum Turn-On Delay Time: 300 ns
Moisture Sensitive: Yes
Operating Supply Current: 120 uA
Pd - Power Dissipation: 625 mW
Product Type: Gate Drivers
Propagation Delay - Max: 30 ns
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
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Attributes selected: 0

Datasheet

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USHTS:
8542390090
TARIC:
8542399000
ECCN:
EAR99

High-Side & Low-Side Gate Driver ICs

IXYS High-Side and Low-Side Gate Driver ICs offer 600mA/290mA to 4.5A/4.5A sink/source output current capabilities. The devices feature a wide operating voltage range of 10V to 20V. Protections include undervoltage lockout (UVLO) and shoot-through. IXYS High-Side and Low-Side Gate Driver ICs operate in a -40°C to +125°C temperature range and are available in SOIC-8, -14, -16 industry-standard packages and pin-outs.

Gate Drivers for N-Channel MOSFETs & IGBTs

IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs. These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration. The high-voltage technology enables the high side to switch to 600V in a bootstrap operation. The drivers provide feature high pulse current buffers designed for minimum driver cross conduction. Other features include logic inputs with 3.3V capability, Schmitt triggered logic inputs, and undervoltage lockout (UVLO) protection. IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40°C to +125°C.

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