MASTERGAN5

STMicroelectronics
511-MASTERGAN5
MASTERGAN5

Mfr.:

Description:
Gate Drivers High power density 600 V half-bridge driver with two enhancement mode GaN power

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 207

Stock:
207 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 207 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹649.54 ₹649.54
₹501.31 ₹5,013.10
₹464.47 ₹11,611.75
₹418.65 ₹41,865.00
₹398.89 ₹99,722.50
₹370.14 ₹1,85,070.00
₹324.32 ₹3,24,320.00
₹314.44 ₹7,86,100.00
4,680 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
QFN-31
2 Driver
4 Output
4 A
3.3 V
15 V
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Moisture Sensitive: Yes
Product Type: Gate Drivers
Shutdown: Shutdown
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Technology: GaN
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.