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NTMFS0D6N03CT1G

Name: onsemi NTMFS0D6N03CT1G
Brand: onsemi
SKU: 863-NTMFS0D6N03CT1G
Price: 256.94 INR
Availability: InStock

Mouser No:

863-NTMFS0D6N03CT1G

Mfr. No:

NTMFS0D6N03CT1G

Mfr.:

onsemi

Description:

MOSFETs LFPAK WIDE SOA AND SO8FL EXPANSION

Datasheet:

NTMFS0D6N03CT1G Datasheet

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In Stock: 4,334

Stock:: 4,334 Can Dispatch Immediately

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Factory Lead Time:: 37 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹256.94	₹256.94
	₹167.10	₹1,671.00
	₹115.00	₹11,500.00
	₹95.23	₹47,615.00
	₹90.74	₹90,740.00
Full Reel (Order in multiples of 1500)
	₹81.75	₹1,22,625.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	433 A
Rds On - Drain-Source Resistance:	620 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTMFS0D6N03C
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NTMFS0D6N03CT1G Datasheet

PCN

Material Composition Disclosure

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are small-footprint and compact MOSFETs with low R_DS(on) and low capacitance. The low R_DS(on) value helps to minimize conduction losses, and low capacitance minimizes driver losses. These single N-channel power MOSFETs are Pb-free and RoHS compliant and feature a -55°C to +175°C operating temperature range.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.