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RGS30TSX2DGC11

Name: ROHM Semiconductor RGS30TSX2DGC11
Brand: ROHM Semiconductor
SKU: 755-RGS30TSX2DGC11
Price: 778.91 INR
Availability: InStock

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Mouser No:

755-RGS30TSX2DGC11

Mfr. No:

RGS30TSX2DGC11

Mfr.:

ROHM Semiconductor

Description:

IGBTs 10 s Short-Circuit Tolerance, 1200V 15A, FRD Built-in, Field Stop Trench IGBT

Datasheet:

RGS30TSX2DGC11 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RGS30TSX2DGC11

In Stock: 497

Stock:: 497 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 497 will be subject to minimum order requirements.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹778.91	₹778.91
	₹532.75	₹5,327.50
	₹347.68	₹34,768.00
	₹343.19	₹1,54,435.50
10,350	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247N-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	30 V
Continuous Collector Current at 25 C:	30 A
Pd - Power Dissipation:	267 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	ROHM Semiconductor
Gate-Emitter Leakage Current:	500 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Part # Aliases:	RGS30TSX2D

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Datasheet

RGS30TSX2DGC11 Datasheet (PDF)

PCN

Product Change Notification 2024-10-15 (PDF)

Specification Sheets

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RGSx0TSX2x Field Stop Trench IGBTs

ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter, UPS, PV inverters, and power conditioner applications. The RGSx0TSX2x IGBTs offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (V_CE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.