RGSX5TS65DHRC11

ROHM Semiconductor
755-RGSX5TS65DHRC11
RGSX5TS65DHRC11

Mfr.:

Description:
IGBTs 8s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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Learn more about ROHM Semiconductor RGSX5TS65DHRC11

In Stock: 450

Stock:
450 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 450 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹1,016.09 ₹1,016.09
₹608.22 ₹6,082.20
₹518.38 ₹51,838.00
₹485.14 ₹2,18,313.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-247N-3
Through Hole
Single
650 V
2.15 V
30 V
114 A
404 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 450
Subcategory: IGBTs
Part # Aliases: RGSX5TS65DHR
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Attributes selected: 0 

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

Datasheet

PCN

Specification Sheets

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CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RGSX5TS65 650V 75A Field Stop Trench IGBTs

ROHM Semiconductor RGSX5TS65 650V 75A Field Stop Trench IGBTs feature a low collector-emitter saturation voltage. The RGSX5TS65 has a short circuit withstand time of 8μs. It's qualified to AEC-Q101 and has Pb-free lead plating.

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